Infineon Wins Patent Infringement Case Against Innoscience

The District Court Munich, Germany (Landgericht München I) has ruled in favor of Infineon Technologies in two further patent infringement cases – specifically one based on a patent and one based on a utility model – concerning gallium nitride (GaN) technology between Infineon and Innoscience.

The cases concern the unauthorized use of GaN technologies patented by Infineon by the Chinese company Innoscience. 

With the rulings, the court prohibits Innoscience from manufacturing, selling, and marketing additional patent-infringing products in Germany. Furthermore, the court has ordered Innoscience to pay damages to Infineon.

Courts and authorities in Germany and the United States have repeatedly concluded that Innoscience’s products infringe Infineon’s intellectual property rights. Prior rulings include the decision against Innoscience from August 1, 2025, in an initial German proceeding. 

Furthermore, on May 7, the Full Commission of the U.S. International Trade Commission (ITC) found that Innoscience had infringed an Infineon patent in the field of gallium nitride (GaN) technology. Additional proceedings regarding the infringement of other Infineon patents are pending in the U.S. and Germany.

“Today’s ruling demonstrates the value of our GaN portfolio and underscores our commitment to vigorously defending our intellectual property and promoting fair competition,” said Johannes Schoiswohl, Senior Vice President and Head of Infineon’s GaN Systems Business Line.