AIXTRON Partners with Fraunhofer IISB to Enhance Silicon Carbide Production Technology

AIXTRON has teamed up with research institution Fraunhofer IISB (Institute for Integrated Systems and Device Technology) in Erlangen, Germany, to develop 150 mm Silicon Carbide (SiC) epitaxy processes using the new AIXTRON 8×150 mm G5WW Vapor Phase Epitaxy (VPE) system. AIXTRON’s Planetary Reactor tool will be installed at the IISB cleanroom laboratory in the fourth quarter of 2014.

“Through this partnership we expect to further accelerate the implementation of 150 mm SiC technology in the industry by pairing our process know-how in manufacturing SiC epitaxial layers with AIXTRON’s SiC equipment expertise,” said Dr. Jochen Friedrich, head of department materials at Fraunhofer IISB. “We will use the G5WW production system for process optimization and demonstration purposes at the IISB facilities in Erlangen.”

Fraunhofer IISB has developed fundamental understanding in low-defect-density SiC epitaxial processes, which are elementary for the manufacturing of high voltage SiC devices. Special characterization techniques like room temperature photoluminescence imaging and selective defect etching have been developed and adapted to the SiC material properties at Fraunhofer IISB. In its laboratories complete SiC prototype devices can be processed and characterized.

“Based on the worldwide recognized experience of Fraunhofer IISB in SiC epitaxy technology and characterization, we will jointly enable the optimization of epitaxial production processes for 150 mm SiC wafers using our state-of-the-art G5WW production tool,” Dr. Frank Wischmeyer, vice president power electronics at AIXTRON, said.