Applied Materials’ New Photomask Etch System Extension of Multiple Patterning to 10NM and Beyond

Applied Materials introduced the Applied Centura Tetra Z Photomask Etch system for etching next-generation optical lithographic photomasks needed by the industry to continue multiple patterning scaling to the 10nm node and beyond. The new tool delivers angstrom-level photomask accuracy for critical dimension (CD) parameters required to meet stringent patterning specifications for future logic and memory devices.
 
“Our Tetra Z system represents the state-of-the-art in photomask etch technology, employing advances in precision materials engineering and plasma reaction kinetics to extend the use of 193nm lithography,” said Rao Yalamanchili, GM of Applied’s Mask Etch product division.
 
Excellent CD performance combined with high etch selectivity enable the use of thinner resist films for achieving smaller photomask CD patterns on critical device layers.