Riber, imec Extend Successful Collaboration on Next-Generation III-V Logic CMOS

Riber, a leading supplier of molecular beam epitaxy (MBE) equipment and services to the compound semiconductor industry, signed an agreement with imec to further collaborate on epitaxy process technologies for next-generation III-V CMOS devices. The agreement follows a successful collaboration in the field of advanced channel materials for high-performance CMOS scaling, germanium and compound semiconductor (III-V) materials.

In the new project, the suitability of Riber’s 300 mm UHV chamber (ISA300), equipped with in-situ tools for surface analysis, and clustered with state-of-the-art 300mm Si CMOS production equipment, will be evaluated for the production of advanced CMOS devices based on high-mobility Ge and IIIV channels.

“Participating in early stage research is intrinsic to Riber’s aim to strengthen our leading position in the compound semiconductor industry,” said Frédérick Goutard, Riber CEO. “Molecular beam epitaxy (MBE) is considered to be most efficient technology to leverage compound semiconductors towards high-end applications with a tremendous market potential, such as mobile phones, telecom, automotive, satellite. Using our ISA300 chamber in a 300mm cluster configuration will allow for higher performance in terms of devices operating at high frequencies with reduced energy consumption, etc. We are therefore convinced that this project will clearly demonstrate the attractiveness of our technology in the production of next generations CMOS devices.”

“Through the collaboration with Riber, imec can integrate the power of UHV-systems into state-of-the-art semiconductors production equipment on large diameter wafers,” said Hans Lebon, vice president fab operations and process step R&D at imec. “This will allow the application of powerful in-situ surface analysis tools in CVD and ALD equipment which so far was not feasible due to the gas phase environment. Also, MBE-like UHV-techniques for interface control and passivation come in reach which will benefit the development of next generation CMOS technologies.”