High Power Opto to Acquire AIXTRON MOCVD Tool for Production of GaN LED Epiwafers

AIXTRON AG announced that High Power Opto Inc.(HPO), based in Taichung, Taiwan, has placed an order for one AIX 2800G4 HT MOCVD system in the second quarter of 2008.

High Power Opto will receive a system in the 42×2″ wafer configuration. It will be installed at the company’s state-of-the-art production facilities in Taiwan in the first quarter of 2009 and be used for volume production of ultra high brightness (UHB) gallium nitride based LEDs.

Taiwan’s LED pioneer, K.H. Huang, the Chairman of HPO comments: “This new AIXTRON equipment will be very important for our strategic company plans. We were already producing among the brightest commercially available UHB AlGaInP red LEDs on AIXTRON’s AIX 2600G3 Planetary Reactor system. We now plan to be equally successful with UHB blue-green GaN LEDs. The new AIX 2800G4 HT MOCVD system will form the basis of our planned transition away from buying GaN epiwafers for in-house device fabrication. HPO’s very experienced team consisting of many of the Taiwanese LED industry’s pioneers will use the AIX 2800G4 HT to realize our own GaN MOCVD process solution. Through an HPO proprietary epiwafer technology we will boost blue LED performance to record levels.”